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| AEGIS SEMICONDUTORES LTDA. A1C:40S.XX.10 VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 150 C A1C:40S.02.10 A1C:40S.04.10 A1C:40S.06.10 A1C:40S.08.10 A1C:40S.10.10 A1C:40S.12.10 A1C:40S.14.10 A1C:40S.16.10 200 400 600 800 1000 1200 1400 1600 O Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 150O C 300 500 700 900 1100 1300 1500 1700 This datasheet applies to: Metric thread: A1C:40S.XX.10, A1D:40S.XX.10 Inch thread: A2C:40S.XX.10, A2D:40S.XX.10 TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 150 -40 to 150 40 100 65 0.71 IFSM Max. Peak non-rep. surge current 0.77 kA 0.81 0.88 2.74 2.98 I t Max. I t capability 3.12 3.40 2 1/2 2 1/2 I t Max. I t capability 2 2 UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial TJ = 125 O rated VRRM C, applied after surge. O C C C A O IF(RMS) Nom. RMS current A Initial TJ = 125 C, no voltage applied after surge. O Initial TJ = 125 C, rated VRRM applied after surge. O kA s t = 10ms t = 8.3 ms O 2 Initial TJ = 125 C, no voltage applied after surge. 2 37.9 0.2 50 40 25 4 2 1/2 As Initial TJ = 125 C, no voltage applied after surge. for time tx = I t TJ = 25 C O It 2 1/2 * tx1/2. (0.1 < tx < 10ms). IRRM Maximum peak reverse current at rated VRRM . IRM Peak reverse recovery current IFM Peak forward current di/dt Max. Non-repetitive rate-ofrise current F Mounting Force mA A A A/ms N.m TJ = 25 C, VD = VDRM , IFM = 40A. - O AEGIS A1C:40S.XX.10 CHARACTERISTICS PARAMETER VFM peak on-state voltage VF(TO) Threshold voltage rF Slope resistance trr Maximum reverse recovery time RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. --------------30(1.06) MAX. UNITS 1.55 1.19 2.4 1000 2000 0.85 0.2 --O TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 126A. TJ = 150 O C TJ = 25OC, IF = 1A to V R = 30V, -dIF/dt = 25A/ms TJ = 25OC, -dIF/dt = 25A/ms, IFM = p x rated IF(Av.). O V V mW ns C/W DC operation C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) DO-203AB (DO-5) JEDEC Maximum Allowable Case Temperature (C) 150 Maximum Allowable Case Temperature 150 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 140 140 130 120 110 90 30 130 30 120 60 60 110 90 120 100 90 80 0 5 10 15 20 25 30 35 120 100 180 180 DC 90 0 *Sinusoidal waveform 10 20 30 40 40 45 50 55 60 Average Forward Current (A) *Rectangular waveform Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 240 220 200 180 160 140 120 100 80 60 40 20 0 *Sinusoidal waveform 30 240 220 200 180 160 140 120 100 80 60 40 20 0 *Rectangular waveform 60 90 120 180 DC 30 60 90 120 180 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics AEGIS A1C:40S.XX.10 Forward Voltage Drop 1 Transient Thermal Impedance ZthJC 100 Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 0.1 125C 25C 10 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.01 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics 1000 Fig. 6 - Transient Thermal Impedance Characteristics 1000 Frequency Characteristics Frequency Characteristics 50 Hz Peak On-State Current (A) 100 Hz 200 Hz 500 Hz 1 kHz Peak On-State Current (A) 50 Hz 100 Hz 200 Hz 500 Hz 1 kHz 100 2 kHz 100 1x101 *Sinusoidal pulse Tc = 60C 1x102 1x103 104 10 1x101 *Rectangular pulse Tc = 60C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 7 - Frequency Characteristics 1000 Fig. 8 - Frequency Characteristics Frequency Characteristics Frequency Characteristics 1000 50 Hz 50 Hz Peak On-State Current (A) Peak On-State Current (A) 100 Hz 200 Hz 500 Hz 1 kHz 100 Hz 200 Hz 500 Hz 100 2 kHz 100 1 kHz *Sinusoidal Pulse Tc = 80C 1x102 1x103 104 1x101 *Rectangular Pulse Tc = 80C 1x102 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics AEGIS A1C:40S.XX.10 1000 Frequency Characteristics 1000 Frequency Characteristics 50 Hz 50 Hz 200 Hz Peak On-State Current (A) 100 Hz 100 Hz 200 Hz 500 Hz Peak On-State (A) 500 Hz 1 kHz 100 100 10 *Sinusoidal pulse Tc = 100C 1x102 1x103 104 Pulse Basewidth (ms) *Rectangular pulse Tc = 100C 1E-4 1E-3 0.01 Pulse Basewidth (ms) Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Maximum On-State Energy Power Loss 100 Maximum On-State Energy Power Loss 0.01 J 0.02 J 0.05 J 0.1 J 0.2 J 0.5 J 100 0.02 J 0.05 J 0.1 J 0.2 J 0.5 J 1J 0.01 J Peak On-State Current (A) 10 Peak On-State Current (A) 1x102 1x103 104 10 1 *Sinusoidal pulse 1 1x102 *Rectangular pulse 1x103 104 Pulse Basewidth (ms) Pulse Basewidth (ms) Fig. 13 - Maximum On-State Power Loss Characteristics Fig. 14 - Maximum On-State Power Loss Characteristics DO-203AB (DO-5) SW 17 M8 x 1.25 1/4" UNF 2A Fig. 15 - Outline Characteristics |
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